发明名称 |
CIRCUIT FOR GENERATING SENSE AMPLIFIER ENABLE SIGNAL COMPRISING PROCESSOR TRACKING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME |
摘要 |
PURPOSE: A circuit for generating a sense amplifier enable signal comprising a processor tracking circuit and a semiconductor memory device comprising the same are provided to minimize difference between the delay characteristics of a path for data sensing and delay characteristics of a path for generating a sense amplifier enable signal even though there is a process change. CONSTITUTION: According to the circuit(300) for generating a sense amplifier enable signal of a semiconductor memory device generating a signal enabling a bit line sense amplifier, a dummy bit cell(22) is connected to a dummy word line and a dummy bit line and discharges the dummy bit line in response to a signal of the dummy word line. And a processor tracking circuit(21) adjusts a signal level of the dummy word line in response to a signal level of the dummy bit line to adjust a discharge speed of the dummy bit line.
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申请公布号 |
KR20030086111(A) |
申请公布日期 |
2003.11.07 |
申请号 |
KR20020024484 |
申请日期 |
2002.05.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, HYEON SU;SUNG, NAK U |
分类号 |
G11C11/417;G11C7/06;G11C7/08;G11C7/14;G11C11/419;(IPC1-7):G11C7/08 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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