SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device by using a SOI substrate whose parasitic capacitance is reduced while a fluctuation of parasitic bipolar by a substrate floating effect and a threshold voltage by a support substrate bias is prevented and to provide a manufacturing method of the structure. SOLUTION: In the semiconductor device using the SOI substrate, a P well diffusion layer or an N well diffusion layer is formed only in a body region being a lower part of a gate electrode in a semiconductor thin film layer. COPYRIGHT: (C)2004,JPO