| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and its fabricating method, in which erroneous operation is reduced by preventing conduction of the same conductivity type well and a silicon substrate from being blocked in the depth direction, and to enhance the latch-up resistance by decreasing the sheet resistance of the well. SOLUTION: A collector N<SP>+</SP>type buried layer 105 is provided at a part of a P type silicon substrate 102 by implanting impurity ions of As, an N type epitaxial layer 106 is formed on the P type silicon substrate 102 and a P type well 107 is formed in the N type epitaxial layer 106 by implanting impurity ions of P to fabricate a semiconductor device wherein the thickness of the N type epitaxial layer 106 is set substantially equal to the depth of the P type well 107 at a position of peak impurity concentration. COPYRIGHT: (C)2004,JPO
|
