METHOD FOR PERFORMING ACCESS OPERATION IN SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY ARRAY AND INTEGRATED CIRCUIT DEVICE INCLUDING CIRCUIT FOR CONTROLLING COLUMN SELECTING SIGNAL

摘要

PROBLEM TO BE SOLVED: To provide automatic delay technique for early read and write memory access operation in integrated circuit elements using a synchronous dynamic random access memory (SDRAM) elements and an incorporated SDRAM array. SOLUTION: A circuit and method for controlling internal column selection ('Yi') and a data signal is provided. A column address strobe ('/CAS') signal can be made (active) earlier than the case in which conventional SDRAM array is used. In one embodiment, a column selection signal ('read' or 'write') is delayed until a signal generated after is made valid out of a corresponding pre-decoded column address signal or respective column clock signals. COPYRIGHT: (C)2004,JPO