| 摘要 |
PURPOSE: A method for forming a semiconductor capacitor is provided to be capable of simplifying processes by forming an analog capacitor of ONO(Oxide/Nitride/Oxide) structure using a single poly. CONSTITUTION: A gate oxide layer(102) is formed on a semiconductor substrate(100), and a poly layer is deposited on the gate oxide layer. After forming a poly oxide layer on the poly layer, a capacitor pattern is formed by selectively etching the poly oxide layer and poly patterns(104a,104b) are formed by wet-etching. The poly oxide layer is removed by etch-back. A thermal oxide layer(110) is formed on the poly pattern(104a,104b). A nitride layer(112) is formed on the thermal oxide layer. By plugging the nitride layer(112), a capacitor of ONO structure is formed.
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