| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an FBAR (film bulk acoustic resonator) element, having an improved insertion loss characteristics by forming an insulating layer on a silicon substrate, to prevent a signal generated in an activation area from being transmitted to the substrate. <P>SOLUTION: In the FBAR element according to a specific embodiment, a portion of a membrane layer 56, corresponding to the activation area, is dry- etched to have a partially reduced thickness, thereby adjusting the resonance frequency band and improving the transmission gain. In addition to a method of manufacturing the FBAR element, there is provided a method of manufacturing the FBAR element, which is capable preventing structural drawbacks occurring in an air gap forming process due to normal wet etching, by forming a sacrificial layer 53 with a polysilicon and forming an air gap (A3) by dry etching, and which is capable of freely adjusting locations and the number of via holes. <P>COPYRIGHT: (C)2004,JPO |
