| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce damage on a semiconductor layer due to irradiation with an electron beam for forming a low resistance p-type layer in the fabrication process of a III nitride based compound semiconductor element. <P>SOLUTION: While heating a substrate, a III nitride based compound semiconductor doped with p-type impurities is irradiated with electrons under an acceleration voltage of 70 kV or less at the time of arrival thus forming a low resistance p-type layer. <P>COPYRIGHT: (C)2004,JPO |
