| 摘要 |
PROBLEM TO BE SOLVED: To enhance withstand voltage of the capacitance insulation film of a capacitor constituting the step-up circuit (step-down circuit) of a nonvolatile memory. SOLUTION: Polysilicon films (10b, 20) laid in two layers and constituting the floating gate of a nonvolatile memory also constitute a capacitor electrode CE. The lower layer polysilicon pattern 10b is formed not to touch the boundary of an element forming region and an isolation region 6. Furthermore, a silicon oxide film 19 is formed on the boundary of the element forming region and the isolation region 6. The polysilicon film 20 is formed on the polysilicon pattern 10b and the silicon oxide film 19 to extend over the isolation region 6 and a joint to a first layer interconnect M1, i.e., a plug P1, is formed above the isolation region 6 and the polysilicon film 20. According to the arrangement, the capacitance insulation film 9c can be protected against breakdown due to concentration of field at the end part of the isolation region 6. COPYRIGHT: (C)2004,JPO
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