METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having the step of forming the upper side end of a contact hole of an interlayer insulating film in a protruding shape on the upper side end without necessity of ion implanting for suppressing the increase in the contact resistance after reflowing process and to provide the semiconductor device obtained by the same. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of: forming a p-type base region 5 on an n--type layer 2 front layer in a semiconductor substrate 3 having an n--type layer 2 and forming an n+type source region 6 on the surface layer of the p-type base region 5; then forming an interlayer insulating film 11 on the layer 2; etching to the midway of the film 11 in a contact hole forming region; and then reflowing in the state that an interlayer insulating film 11a is retained on the layer 2. Thus, the upper side end of a contact hole 15 on the film 11 becomes a protruding curve shape on the upper side end. Thereafter, the film 11 is removed, and a source electrode 16 is formed. COPYRIGHT: (C)2004,JPO