| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon epitaxial wafer, which further improves the crystalline property of an epitaxial layer. SOLUTION: The silicon epitaxial layer 1 is grown on a silicon monocrystalline substrate W by chemical vapor deposition using a monosilane (SiH<SB>4</SB>) gas as a material at a growth temperature, for instance, of 700°C and in a reduced pressure atmosphere (hydrogen gas atmosphere). Thus formed silicon epitaxial wafer EPW is then subjected to thermal treatment without being taken out from a reactor where chemical vapor deposition has been performed. In this way, polycrystalline silicon 2 which is partially contained in the silicon epitaxial layer 1 is turned to monocrystal. COPYRIGHT: (C)2004,JPO
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