PHOTO PROCESS FOR COPPER DUAL DAMASCENE

摘要

PURPOSE: A photo process for copper dual damascene is provided to be capable of simultaneously forming a via pattern and a metal pattern by using the etching selectivity between an insulating layer and a photoresist layer. CONSTITUTION: The second insulating layer(14) is formed on the entire surface of the first insulating layer(10) having a copper line(12). The first photoresist pattern is formed on the resultant structure so as to cover selectively the center portion of the copper line(12). The second insulating layer(14) is partially etched using the first photoresist pattern as a mask. The second photoresist is formed on the entire surface of the resultant structure. The second and first photoresist and the second insulating layer(14) of a via region are selectively etched. Then, a copper interconnection is formed.