| 摘要 |
PURPOSE: A CVD(Chemical Vapor Deposition) apparatus and a deposition method are provided to be capable of obtaining an aiming thin film by using a pre-reactor system installed at the CVD apparatus. CONSTITUTION: A CVD apparatus is provided with a reaction chamber(201) for conserving a vacuum state and a susceptor(202) installed in the reaction chamber for loading a process object substrate(203). At this time, the reaction chamber includes an exhaust part. The CVD apparatus further includes at least one material gas supply pipe(210,211) opposite to the susceptor for flowing vaporized material gas into the reaction chamber and a pre-reactor system(213) installed between a showerhead(206) formed at the upper portion of the reaction chamber and the gas supply pipe(211) for transforming the material gas into reactive gas.
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