| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a superior characteristic by using a semiconductor area demonstrating a high-quality crystallinity for manufacture of a thin-film transistor. <P>SOLUTION: The semiconductor device is provided with a thin-film transistor that is provided with a semiconductor layer including a crystalline area having a channel formation area, a source area and a drain area, a gate electrode 1205a for controlling the conductivity of the channel formation area, and a gate insulation film formed between the gate electrodes 1205a to 1205d and the semiconductor layer. The semiconductor layer includes amorphous gettering areas 1203a to 1203d and 1204a to 1204d. <P>COPYRIGHT: (C)2004,JPO</p> |
