| 摘要 |
PROBLEM TO BE SOLVED: To achieve an etching monitoring method for accurately monitoring etching without being affected by contamination on a sample surface and the charge of electrons. SOLUTION: In a deposition mechanism 10, a three-dimensional drive mechanism composed of piezoelectric elements is provided at a rear side, and an introduction tube enters a portion near a sample 1 from an oblique direction. A conductive material such as metal is injected to a contact hole to be measured via the deposition mechanism 10, the influence due to the charge on the sample surface is eliminated, and current flowing in the sample is measured. Based on the measured current value, the film thickness of the sample surface is obtained. Additionally, an active gas is injected to the sample surface (into the contact hole) via the deposition mechanism 10, thus removing contaminants on the sample surface, and hence accurately measuring the current. COPYRIGHT: (C)2004,JPO
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