发明名称 |
Magnetoresistive memory (MRAM) |
摘要 |
The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of the write currents lying in the cell array plane decreases sufficiently rapidly with increasing distance from the crossover point. The cell array is constructed from a matrix of the column leads and the row leads.
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申请公布号 |
US2003206461(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20030436428 |
申请日期 |
2003.05.12 |
申请人 |
FREITAG MARTIN;GOGL DIETMAR;HOENIGSCHMID HEINZ;LAMMERS STEFAN |
发明人 |
FREITAG MARTIN;GOGL DIETMAR;HOENIGSCHMID HEINZ;LAMMERS STEFAN |
分类号 |
H01L27/105;G11C11/16;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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地址 |
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