METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL WAFER

摘要

A method for producing a silicon single crystal by the Czochralski method wherein a seed crystal is contacted with a silicon melt (2) held in a crucible (32) and the seed crystal is pulled up while being rotated, to thereby grow a silicon single crystal (1), characterized in that the crucible is not rotated or is rotated in the same direction with that of the rotation of the seed crystal, and a crystal is grown in a no defect region which is an N region being present outside OSF generating in a ring form in a heat oxidation treatment and is free from the presence of a defect region detected by Cu deposition. It is preferred that a horizontal magnetic field is applied and the crucible is rotated with a rate in the range of 0 to 2 rpm. The method allows the production, with stability at a high production rate, of a silicon single crystal which does not belong to any of a V region being rich in lattice vacancy, an OSF region and an I region being rich in interstitial silicon, and secures the improvement of electric characteristics such as oxide film breakdown voltage, which results in the manufacture, at a low cost, of a silicon single crystal wafer having no defects and exhibiting a high breakdown voltage and excellent electrical characteristics.