| 摘要 |
A method for forming polysilicon connected deep trench DRAM cell. The method at least includes the following steps. First of all, a substrate is provided. Then, a buried plate drives in the substrate. Then, a capacitor dielectric layer is formed to fill into a lower portion of the deep trench. Next, a dielectric collar layer is formed on a sidewall of the deep trench about the capacitor dielectric layer. Then, a selective growth polysilicon layer is formed to fill into the deep trench of the opening. Then, the shallow trench isolation structure is formed in sidewall of the deep trench. Next, a metal-oxide-semiconductor transistor is formed on the substrate. Next, a spacer is formed on sidewall of the metal-oxide semiconductor transistor. Finally, a polysilicon layer is formed on the metal-oxide-semiconductor transistor.
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