发明名称 |
THz DETECTION EMPLOYING MODULATION DOPED QUANTUM WELL DEVICE STRUCTURES |
摘要 |
An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elements, which are adapted to receive electromagnetic radiation in a desired portion of the THz region, are electrically coupled (or integrally formed with) the p-channel injector electrodes of the heterojunction thyristor device such the that antenna elements are electrically connected to the p-type modulation doped quantum well interface of the device. THz radiation supplied by the antenna elements to the p-type quantum well interface increases electron temperature of a two-dimensional electron gas at the p-type modulation doped quantum well interface thereby producing a current resulting from thermionic emission over a potential barrier provided by said first-type modulation doped quantum well interface. This current flows over the p-type channel barrier to the ntype quantum well interface, thereby causing charge to accumulate in the n-type quantum well interface. The accumulated charge in the n-type quantum well interface is related to the intensity of the received THz radiation. The heterojunction-thyristor-based THz detector is suitable for many applications, including data communication applications and imaging applications. |
申请公布号 |
WO03092047(A2) |
申请公布日期 |
2003.11.06 |
申请号 |
WO2003US13183 |
申请日期 |
2003.04.28 |
申请人 |
THE UNIVERSITY OF CONNECTICUT CENTER OF SCIENCE &;TAYLOR, GEOFF, W. |
发明人 |
TAYLOR, GEOFF, W. |
分类号 |
H01L;H01L27/146;H01L27/148;H01L29/205;H01L29/417;H01L29/74;H01L31/0304;H01L31/0352;H01L31/111;H01L31/115 |
主分类号 |
H01L |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|