HIGH RESISTANCE SILICON WAFER AND METHOD FOR PRODUCTION THEREOF

摘要

A high resistance silicon wafer which has a resistivity of 100 ohm or more, contains oxygen precipitates (BMD) having a size of 0.2 mum or more formed in the inside thereof in a high density of 1 x 10<4> pieces/cm<2> or more, and has an oxygen concentration of 12 x10<17> atoms/cm<3> or less (ASTM F-121, 1979) and a carbon concentration of 0.5 x10<16> atoms/cm<3> or more; and a method for producing the silicon wafer which comprises subjecting a high resistance, high oxygen concentration silicon wafer doped with carbon having the above resistivity, an oxygen concentration of 14 x10<17> atoms/cm<3> or more (ASTM F-121, 1979) and the above carbon concentration, in a non-oxidizing gas atmosphere, to an oxygen precipitation nucleus forming heat treatment at 500 to 900°C for five hours or more and further to an oxygen precipitate growing heat treatment at 950 to 1050°C for ten hours or more, to thereby reduce the oxygen concentration in the wafer to the above level. The high resistance silicon wafer is excellent in gettering capability, mechanical strength and economy, and further can effectively suppress the generation of oxygen thermal donors in a heat treatment for forming a circuit carried out on the device maker side.