| 发明名称 |
Semiconductor device and method for manufacturing the same, semiconductor wafer and semiconductor device manufactured thereby |
| 摘要 |
A semiconductor device comprises a base semiconductor substrate (201) having an edge area (120) which surrounds an element forming area (110), a buried oxide film (202) provided over the base semiconductor substrate (201) in the element forming area (110), an element forming semiconductor substrate (203) provided over the buried oxide film (202).
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| 申请公布号 |
US2003205730(A1) |
申请公布日期 |
2003.11.06 |
| 申请号 |
US20030419808 |
申请日期 |
2003.04.22 |
| 申请人 |
OHUCHI SHINJI |
发明人 |
OHUCHI SHINJI |
| 分类号 |
H01L23/29;H01L21/3205;H01L21/56;H01L21/60;H01L21/768;H01L21/84;H01L23/12;H01L23/31;H01L23/485;H01L23/52;H01L23/522;H01L27/12;(IPC1-7):H01L31/072 |
主分类号 |
H01L23/29 |
| 代理机构 |
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代理人 |
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