发明名称 |
METHOD FOR THE PRODUCTION OF A NITRIDE COMPOUND SEMICONDUCTOR BASED SEMICONDUCTOR COMPONENT |
摘要 |
The invention relates to a method for the production of a nitride compound semiconductor based semiconductor element. In a first step of the inventive method, a semiconductor body (1) containing at least one nitride compound semiconductor is provided. A metal layer is applied to the surface (6) of the semiconductor body (1) in a second step. In a third step, the semiconductor body (1) is subsequently structured, whereby part of the metal layer (7) and parts of the semiconductor body (1) located thereunder are removed. |
申请公布号 |
WO03030221(A3) |
申请公布日期 |
2003.11.06 |
申请号 |
WO2002DE03667 |
申请日期 |
2002.09.27 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH;HAERLE, VOLKER;LELL, ALFRED;WEIMAR, ANDREAS |
发明人 |
HAERLE, VOLKER;LELL, ALFRED;WEIMAR, ANDREAS |
分类号 |
H01S5/343;H01S5/20;H01S5/22;H01S5/223;H01S5/323 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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