| 发明名称 |
Lower temperature method for forming high quality silicon-nitrogen dielectrics |
| 摘要 |
A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.
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| 申请公布号 |
US2003207590(A1) |
申请公布日期 |
2003.11.06 |
| 申请号 |
US20030452999 |
申请日期 |
2003.06.03 |
| 申请人 |
WILK GLEN D.;ANTHONY JOHN MARK;WEI YI;WALLACE ROBERT M. |
发明人 |
WILK GLEN D.;ANTHONY JOHN MARK;WEI YI;WALLACE ROBERT M. |
| 分类号 |
H01L21/28;H01L21/318;H01L29/51;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/28 |
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