发明名称 High voltage row and column driver for programmable resistance memory
摘要 A driver circuit having one or more MOS transistors. The driver circuit is capable of providing an output voltage greater than the power supply voltage; however, the magnitude of the voltages appearing across the terminals of the MOS transistors are preferably less than or equal to the magnitude of the power supply voltage. The driver circuit may comprise a plurality of serially coupled PMOS transistors and a plurality of serially coupled NMOS transistors wherein the plurality of PMOS transistors and plurality of NMOS transistors are coupled at the output node of the driver.
申请公布号 US2003206428(A1) 申请公布日期 2003.11.06
申请号 US20020137476 申请日期 2002.05.01
申请人 PARKINSON WARD 发明人 PARKINSON WARD
分类号 G11C11/56;G11C16/02;G11C16/10;(IPC1-7):G11C17/00 主分类号 G11C11/56
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