Method forming copper containing semiconductor features to prevent thermally induced defects

摘要

A method for forming a copper containing semiconductor feature to prevent thermally induced defects in including: (a) providing an anisotropically etched opening formed in a dielectric insulating layer; (b) conformally depositing a barrier layer over the anisotropically etched opening; (c) conformally depositing a copper portion to fill a portion of the anisotropically etched opening with copper; and, (d) repeating steps b and c at least once to completely fill the anisotropically etched opening to form a copper filled semiconductor feature.