| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition for the CMP (chemomechanical polishing) processing for semiconductor devices each having a copper film and a tantalum compound, having such high selectivity as to be high in the polishing rate of the copper film but low in the polishing rate of the tantalum compound and affording the surface of the copper film with high smoothness. <P>SOLUTION: The polishing composition comprises (A) a polishing material, (B) an antioxidant, (C) an organic acid, (D) hydrogen peroxide, and (E) water, wherein the polishing material consists of an organic macromolecular compound 5-500 nm in mean particle size, the elastic modulus of the particle being 0.5-6 GPa at 23°C, and the concentration of the polishing material in the composition being 1-30 wt.%. <P>COPYRIGHT: (C)2004,JPO</p> |
