摘要 |
A contact (32) between a source/drain (20) and a gate (26) is made by making a selected portion (35) of the gate dielectric (46) conductive by an implant into that selected portion (35) of the gate dielectric (46). The gate material is in a layer over the entire integrated circuit (10). Areas (32) where gates (26) are to connect to source/drains (20) are identified and the gate dielectric (46) at those identified locations (35) is implanted to make it conductive. The source/drains (20) are formed so that they extend under these areas of conductive gate dielectric (35) so that at these locations the implanted gate dielectric (35) shorts the gate (26) to the source/drain (20). This saves area on the integrated circuit (10), reduces the need for interconnect layers, and avoids the problems associated with depositing and etching polysilicon on an exposed silicon substrate. |