发明名称 |
Method of forming ferroelectric thin films on a high-k layer |
摘要 |
A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; depositing a top layer of ferroelectric material on the seed layer at a relatively low temperature; and annealing the substrate, the high-k layer and the ferroelectric layers to form a ferroelectric thin film.
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申请公布号 |
US2003207473(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20030453831 |
申请日期 |
2003.06.02 |
申请人 |
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发明人 |
LI TINGKAI;HSU SHENG TENG |
分类号 |
C23C16/18;C23C16/02;C23C16/40;C23C16/56;H01L21/02;H01L21/28;H01L21/316;H01L21/336;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L21/00;H01L21/31;H01L21/469 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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