发明名称 |
Dual damascene process using a single photo mask |
摘要 |
A dual damascene process using a single photo mask in which a photo mask having patterns with different transparency is applied. A mask layer with a dual layer opening is formed first and then serves as an etching mask to form a dual opening in the dielectric layer. Then a metal layer is filled in the dual layer opening in the dielectric layer to form a dual damascene structure. Therefore, only a single photolithography process is necessary and overlay due to misalignment can be avoided.
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申请公布号 |
US2003207180(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20020255176 |
申请日期 |
2002.09.24 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
SHU SHIH-CHI |
分类号 |
G03F1/14;H01L21/768;(IPC1-7):G03F1/08;G03F7/16;G03F7/40;G03F7/20 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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