发明名称 Dual damascene process using a single photo mask
摘要 A dual damascene process using a single photo mask in which a photo mask having patterns with different transparency is applied. A mask layer with a dual layer opening is formed first and then serves as an etching mask to form a dual opening in the dielectric layer. Then a metal layer is filled in the dual layer opening in the dielectric layer to form a dual damascene structure. Therefore, only a single photolithography process is necessary and overlay due to misalignment can be avoided.
申请公布号 US2003207180(A1) 申请公布日期 2003.11.06
申请号 US20020255176 申请日期 2002.09.24
申请人 NANYA TECHNOLOGY CORPORATION 发明人 SHU SHIH-CHI
分类号 G03F1/14;H01L21/768;(IPC1-7):G03F1/08;G03F7/16;G03F7/40;G03F7/20 主分类号 G03F1/14
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