METHOD FOR FORMING SHALLOW JUNCTIONS BY ION IMPLANTATION IN SILICON WAFERS
摘要
A method for ion implantation into a silicon semiconducting wafer with a buried barrier layer includes the implantation of dopant ions at a low energy level into the substrate to a depth close to the surface. Other ions are implanted at a high energy level into the substrate to form a network of extended defects at a depth beyond the barrier layer. The implanted substrate is subjected to rapid thermal annealing to activate the dopants to form a shallow conducting layer close to the wafer surface.
申请公布号
WO03063218(A3)
申请公布日期
2003.11.06
申请号
WO2003GB00136
申请日期
2003.01.15
申请人
THE UNIVERSITY OF SURREY;NEJIM, AHMED;SEALY, BRIAN