发明名称 |
Anodizing method and apparatus and semiconductor substrate manufacturing method |
摘要 |
A porous layer having a multilayered structure is formed. An Si substrate (102) to be processed is anodized in a first electrolytic solution (141, 151) while being held between an anode (106) and a cathode (104) in an anodizing bath (101). The first electrolytic solution (141, 151) is exchanged with a second electrolytic solution (142, 152). The Si substrate (102) is anodized again, thereby forming a porous layer having a multilayered structure on the Si substrate (102).
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申请公布号 |
US2003205480(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20030459044 |
申请日期 |
2003.06.11 |
申请人 |
SAKAGUCHI KIYOFUMI;SATO NOBUHIKO |
发明人 |
SAKAGUCHI KIYOFUMI;SATO NOBUHIKO |
分类号 |
C25D11/04;C25D11/32;C25D17/00;H01L21/02;H01L21/306;H01L21/3063;H01L21/762;H01L27/12;(IPC1-7):C25D5/00 |
主分类号 |
C25D11/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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