EMC-optimized operating method for MOS semiconductor switching element, involves providing charge current at gate terminal which exceeds first charge current at gate terminal

摘要

A method of operating a semiconductor switching element in which the drain-source (D-S) path of the semiconductor element is connected in series with a load device, involves initially providing a first charge current at the gate terminal and a second charge current (IL2) at the gate terminal which exceeds the first charge current (IL1) when a voltage (VOUT) present over the drain-source (D-S) circuit path fails to exceed a first threshold value, in which the threshold value amounts to between 20 and 80 percent of the supply voltage (UBAT). An Independent claim is given for a circuit arrangement with semiconductor switching element in series with load.