发明名称 Method and system for simulating resist and etch edges
摘要 A method of modeling an edge profile for a layer of material is provided. The layer of material can include a resist and/or an etch. In this method, multiple models can be generated, wherein at least two models correspond to different elevations on the wafer. Each model includes an optical model, which has been calibrated using test measurements at the respective elevations. In this manner, an accurate edge profile can be quickly created using the multiple models. Based on the edge profile, layout, mask, and/or process conditions can be modified to improve wafer printing.
申请公布号 US2003208728(A1) 申请公布日期 2003.11.06
申请号 US20020137828 申请日期 2002.05.01
申请人 NUMERICAL TECHNOLOGIES, INC. 发明人 PIERRAT CHRISTOPHE
分类号 G03F1/14;G03F7/20;H01L21/66;(IPC1-7):G06F17/50 主分类号 G03F1/14
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