发明名称 |
Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method |
摘要 |
The invention provides a high-resolution resist material comprising an acid generator that has high sensitivity and high resolution with respect to high-energy rays of 300 nm or less, has small line-edge roughness, and is superior in heat stability and in shelf stability, and provides a pattern forming method that uses this resist material. The invention further provides a chemically amplified positive resist material comprising a base resin, an acid generator and a solvent in which the acid generator generates an alkylimidic acid containing a fluorine group, and provides a pattern forming method comprising a step of applying the resist material to the substrate, a step of performing exposure to a high-energy ray of a wavelength of 300 nm or less through a photomask following heat treatment, and a step of performing development by a developing solution following heat treatment.
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申请公布号 |
US2003207201(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20020331785 |
申请日期 |
2002.12.27 |
申请人 |
HATAKEYAMA JUN;KOBAYASHI TOMOHIRO;OHSAWA YOUCHI |
发明人 |
HATAKEYAMA JUN;KOBAYASHI TOMOHIRO;OHSAWA YOUCHI |
分类号 |
C07C311/48;C07D333/46;C07D335/02;G03F7/004;G03F7/039;G03F7/075;(IPC1-7):G03F7/038;G03F7/40;C07D335/00;C07D333/18 |
主分类号 |
C07C311/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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