METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND, SILICON SINGLE CRYSTAL AND SILICON WAFER

摘要

A method for producing a silicon single crystal by the Czochralski method not utilizing the Dash Necking method, which comprises using a seed crystal having a shape wherein an end portion is pointed or a part of a pointed end portion is cut off and the angle of such an end portion is 28˚or less, stopping the fall of the seed crystal just before the contact of the end portion with a silicon melt, elevating the temperature of the seed crystal, contacting the end portion with the silicon melt, allowing the seed crystal to sink in the silicon melt down to a desired diameter, and, in pulling up a silicon single crystal thereafter, maintaining the variation of the temperature of the surface of the silicon melt at a range of ± 5˚C or less at least until the start of pulling up the seed single crystal. The method allows, in the growth of a silicon single crystal by the Czochralski method not utilizing the Dash Necking method, the enhancement of probability of success in the growth of a single crystal with no dislocation and also the growth of a silicon single crystal which has a crystal orientation of <110> and also is of great diameter and high weight, for example, has a diameter of a constant diameter portion of greater than 200 mm.