Device for producing chlorine trifluoride for etching semiconductor substrates comprises a plasma reactor, plasma generating units for forming a plasma inside the reactor, and gas feeding for introducing gases into the reactor

摘要

Device for producing chlorine trifluoride comprises plasma reactor (100), plasma generating units for forming a plasma (105) inside the reactor, and gas feeding units (21, 22, 25, 26) for introducing a first gas and a second gas into the reactor so that the gases react with each other under the influence of the plasma to form chlorine trifluoride. A gas outlet (20) is provided to remove the chlorine trifluoride formed from the reactor.