Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure

摘要

This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.