| 摘要 |
To develop an interconnecting substrate, to link at least one microchip on a reception substrate, a layer of fusible material (102) is laid on a substrate (100). An initial layer (104) of dielectric material is etched to allow the openings (106) to match the outlet terminals of the interconnecting substrate. Metal pads (108) are formed in the openings (106) to give the outlet terminals, to be covered by a metal layer (110). The metal layer (110) is etched to give the conductive paths (112), overlapping the openings (106) in the dielectric material (104), at least partially, under the metal layer (110). A layer of dielectric material (114) is over the conductive paths, and is etched to give openings at least partially over the conductive paths (112), to be filled with metal pads. The interconnecting substrate is separated by heat, at a temp. equal to or greater than the melting temp. of the fusible layer (102). The dielectric material is of pref. of polyimide. |
