| 摘要 |
<p>A magnetoresistive element includes a tunnel insulation layer including at least one compound selected from a group consisting of Al oxide, nitride, and oxy-nitriding, a first magnetic layer and a second magnetic layer formed so as to sandwich the tunnel insulation layer, and a third magnetic layer arranged between the first magnetic layer and the tunnel insulation layer. The resistance value varies according to the relative angle of the magnetization directions of the first magnetic layer and the second magnetic layer. The third magnetic layer has a crystalline structure of face-centered cubic crystal or face-centered tetragonal crystal and is orientated parallel (111) to the film surface of the third magnetic layer. A manufacturing method of the magnetoresistive element and a magnetic head or a magnetic memory or a magnetic recording device using the magnetoresistive element are also disclosed. It is possible to provide a magnetoresistive element having an excellent characteristic and heat resistance, a manufacturing method thereof, and a magnetic head, a magnetic memory, and a magnetic recording device using the magnetoresistive element.</p> |
