| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the degree of integration of semiconductor LSI, that is, to improve fineness of processing. <P>SOLUTION: A resist patterning process is provided comprising (a) a first step of applying onto a substrate a resist material containing a polymer or copolymer comprising units of formula (1) (where X<SP>1</SP>and X<SP>2</SP>are each -O-, -S-, -NR-, -PR- or -CR<SB>2</SB>-; R is H or alkyl; and m is an integer of 0-3) in a backbone and having acid unstable groups on side chains and an acid generator which generates an acid upon exposure to form a resist film, (b) a second step of prebaking the resist film, (c) a third step of exposing the prebaked resist film to a pattern of radiation, (d) a fourth step of post-exposure baking the exposed resist film, (e) a fifth step of developing the resist film to form a resist pattern, and (f) a sixth step of post baking the resist pattern for causing thermal flow. <P>COPYRIGHT: (C)2004,JPO |
