发明名称 |
RESIST RESIDUE REMOVER AND CLEANER |
摘要 |
PROBLEM TO BE SOLVED: To provide a resist residue remover and cleaner capable of removing dry etching residue in a semiconductor device manufacturing process and particles and metal impurities on a wafer surface without corroding wiring and gate metals. SOLUTION: The resist residue remover and cleaner is an aqueous solution of pH 0.5-13 containing 0.5-30 mass% phosphoric acid, >0 to 10 mass% hydrochloric acid and 0.5-25 mass%, in total, of one or more amines selected from primary to quaternary amines. COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2003316028(A) |
申请公布日期 |
2003.11.06 |
申请号 |
JP20020119226 |
申请日期 |
2002.04.22 |
申请人 |
KISHIMOTO SANGYO CO LTD;FINE POLYMERS KK |
发明人 |
SUGA SHIGEMASA;OGUSHI KEN;YAMAMOTO HIROMASA;HIRATSUKA KATSUHIRO |
分类号 |
G03F7/42;C09D9/04;C11D3/04;C11D3/06;C11D3/30;H01L21/027;H01L21/304;(IPC1-7):G03F7/42 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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