Method for processing wafer using single frequency RF power in plasma processing chamber

摘要

A method for processing a wafer in a plasma processing chamber using single frequency RF power is provided. The method includes generating a single modulated RF power and providing a wafer over an electrostatic chuck in a plasma processing chamber. The electrostatic chuck includes a first electrode disposed under the wafer for receiving the modulated RF power, and a second electrode disposed over the wafer. The method further includes receiving the modulated RF power, by the plasma processing chamber, and generating plasma and ion bombardment energy in the plasma processing chamber for processing the wafer in response to the modulated RF power.