LIGHT-EMITTING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE WITH DOUBLE HETEROSTRUCTURE

摘要

PURPOSE: A light-emitting gallium nitride-based compound semiconductor device with a double heterostructure is provided to improve brightness and a light emitting output by making a light emitting layer(active layer) and a clad layer formed of a group III-V compound semiconductor composed of a nitride gallium-based material of low resistivity. CONSTITUTION: A light-emitting layer is formed of a low-resistivity InxGa1-xN(0<x <1) compound semiconductor doped with p-type and/or n-type impurity. The first clad layer(16) is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. The second clad layer(20) is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.