| 摘要 |
<P>PROBLEM TO BE SOLVED: To materialize micro-fabrication of high resolution without using costly irradiation apparatus for electron beams, ion beams, etc. <P>SOLUTION: A resist layer including the incomplete oxide of transition metal like W or Mo is pattered to prescribed shapes by selectively exposing and developing the layer. The incomplete oxide of the transition metal described above refers to a compound deviated to a direction where the oxygen content is lower than that of the stoichiometric composition meeting the valence that the transition metal can take, i.e., the compound having the oxygen content in the incomplete oxide of the transition metal lower than the oxygen content of the stoichiometric composition meeting the valence that the transition metal can take. <P>COPYRIGHT: (C)2004,JPO |
