发明名称 Method and apparatus for deposition of low dielectric constant materials
摘要 A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.
申请公布号 US2003207033(A1) 申请公布日期 2003.11.06
申请号 US20020140324 申请日期 2002.05.06
申请人 APPLIED MATERIALS, INC. 发明人 YIM KANG SUB;SEN SOOVO;SUGIARTO DIAN;LEE PETER;YIEH ELLIE
分类号 C23C16/44;C23C16/455;C23C16/509;H01J37/32;(IPC1-7):C23F1/00;C23C16/00;C23C16/40 主分类号 C23C16/44
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