发明名称 Substrate having a modified native oxide layer for improved electrical conductivity
摘要 A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like. The high-energy beam can be an ion beam from a high-energy ion source or it can be a laser beam. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.
申请公布号 US2003207134(A1) 申请公布日期 2003.11.06
申请号 US20030411802 申请日期 2003.04.11
申请人 MUFFOLETTO BARRY;SHAH ASHISH;STEPHENSON DONALD H. 发明人 MUFFOLETTO BARRY;SHAH ASHISH;STEPHENSON DONALD H.
分类号 C23C14/58;C23C16/56;C23C26/00;C23C26/02;H01G4/008;H01G9/04;H01G9/042;H01M4/66;(IPC1-7):B32B15/04 主分类号 C23C14/58
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