发明名称 |
HOLE PLUGGING METHOD BY ION BEAM, ION BEAM MACHINING AND OBSERVING APPARATUS, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENTS |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique of plugging a machined hole after sampling using an FIB at a high speed. SOLUTION: The method has a process step of scanning a holed section formed on a sample surface by irradiation with an ion beam (1) and forming an ion beam gas assisted deposition film (4) in the holed section and is constituted to form the deposition film (4) in the holed section by performing control in such a manner that a portion of the holed section is irradiated with the ion beam and that the other portion is not irradiated therewith in a region (1002) to be scanned with the ion beam. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2003311435(A) |
申请公布日期 |
2003.11.05 |
申请号 |
JP20020118797 |
申请日期 |
2002.04.22 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
SHICHI HIROYASU;FUKUDA MUNEYUKI;SEKIHARA TAKESHI;TOMIMATSU SATOSHI;UMEMURA KAORU |
分类号 |
B23K15/00;C23C16/04;H01J37/26;H01J37/305;H01L21/66;(IPC1-7):B23K15/00 |
主分类号 |
B23K15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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