| 摘要 |
<p>A power amplifier incorporates base ballasted hetero-junction bipolar transistors (HBTs) (110) in parallel. A transistor pair (410, 420) adjusts the voltage applied to the base ballast if it senses that the voltage appearing between one of the HBT transistors and its base ballast is drooping to a level not strong enough to keep the HBTs active. <IMAGE></p> |
