| 摘要 |
A method of fabricating high density sub-lithographic features is disclosed. The method includes the use of common microelectronic processes including sub-lithographic spacer formation and Damascene processes to form a plurality of sub-lithographic spacers (33, 53, 83, 93) on vertical side wall surfaces of features carried by a substrate (11, 71). The sub-lithographic spacers (33, 53, 83, 93) have a period that is less than a minimum resolution lambda of a lithographic system. The density of features, including the sub-lithographic spacers (33, 53, 83, 93), within a minimum resolution lambda of the lithographic system, can be increased by subsequent depositions of material, followed by anisotropic etching to selectively remove horizontal surfaces of the deposited material. Optionally, the spacer materials can be conformally deposited. <IMAGE> |
