SRAM CELL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An SRAM(Static Random Access Memory) cell and a method for manufacturing the same are provided to be capable of reducing the area of the SRAM cell by using an additional local interconnection metal line. CONSTITUTION: An SRAM cell includes the first and second access transistor, the first and second drive transistor, and the first and second load transistor. The first local interconnection metal line(45) is electrically connected between the first node of the first access, load and drive transistor and a gate of the second load and second drive transistor. The second local interconnection metal line(45) is connected between the first node of the second access, load and drive transistor and a gate of the first load and drive transistor. A metal interconnection(50) is electrically connected to the second node of the transistors via a contact hole.