POLISHING METHOD, POLISHING APPARATUS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To energize an object to be polished to a polishing end point with stable current density distribution and enable the use of a conventional plating apparatus, cleaning apparatus or the like and the execution of production process flow.

SOLUTION: A substrate 1 formed with a metal film 2 and a counter electrode 3 are opposedly arranged at a predetermined interval in electrolyte. An electric current is applied to the metal film 2 from an anode 4 which is not in contact with the metal film 2 through electrolyte, and this metal film 2 is electrolytically polished and wiped through sliding of a pud on the metal film 2 while the substrate 1 is being rotated.

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